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SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0230R-HF (RoHS Device) Io = 200 mA VR = 30 Volts 0603(1608) 0.071(1.80) 0.063(1.60) Features Halogen free. Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BB Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) 0.012 (0.30) Typ. Dimensions in inches and (millimeter) Maximum Rating (at TA=25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit VRRM VR IO 35 30 200 V V mA 8.3ms single half sine-wave superimposed on rate load(JEDEC method) IFSM TSTG Tj -40 1 +125 +125 A O C C O Electrical Characteristics (at TA=25 C unless otherwise noted) O Parameter Forward voltage Reverse current IF = 200 mA VR = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.6 1 V uA REV:A QW-G1057 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBU0230R-HF) Fig. 1 - Forward characteristics 1000 1m 125 C O Fig. 2 - Reverse characteristics Forward current (mA ) 100 Reverse current ( A ) 100u 10u 75 C O 10 C O 1u 25 C O 5 12 C 100n -25 C O O 75 25 O C 1 C O 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -25 10n 1n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals (PF) 100 Fig.4 - Current derating curve Average forward current(%) f = 1 MHz Ta = 25 C 100 80 10 60 40 20 1 0 5 10 15 20 25 30 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) Fig. 5 - VF Dispersion map 590 O Fig. 6 - IR Dispersion map 1000 900 O Fig. 7 - CT Dispersion map 50 O Ta=25 C IF=200mA n=30pcs Ta=25 C VR=10V n=30pcs 45 Capacitance between terminals(pF) Forward voltage (mV) Reverse current (nA) 580 800 700 600 500 400 300 200 100 AVG:111nA 40 35 30 25 20 15 10 5 0 AVG:18.8pF Ta=25 C F=1MHz VR=0V n=10pcs 570 560 AVG:568mV 550 540 0 REV:A QW-G1057 Page 2 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 1.00 0.10 0.039 0.004 B 1.85 0.10 0.073 0.004 C 1.00 0.10 0.039 0.004 d 1.55 0.05 0.061 0.002 D 178 1 7.008 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 0.20 0.512 0.008 U/0603 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.004 T 0.23 0.05 0.009 0.002 W 8.00 0.20 0.315 0.008 W1 13.5 MAX. 0.531 MAX. U/0603 (mm) (inch) REV:A QW-G1057 Page 3 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number CDBU0230R-HF Marking Code BB BB Suggested PAD Layout U/0603 SIZE (mm) A B C D E 1.70 0.60 0.80 2.30 1.10 (inch) 0.067 0.024 0.031 C D A E 0.091 B 0.043 Standard Package Qty per Reel Case Type (Pcs) U/0603 4000 Reel Size (inch) 7 REV:A QW-G1057 Page 4 Comchip Technology CO., LTD. |
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